NTF3055 ? 100, NVF3055 ? 100
6
6
V DS ≥ 10 V
5
4
3
V GS = 10 V
V GS = 8 V
V GS = 5 V
5
4
3
2
V GS = 4.5 V
2
T J = 25 ° C
1
0
0
1
V GS = 6 V
2
V GS = 4 V
3
4
1
0
3
T J = 100 ° C
3.5
4
T J = ? 55 ° C
4.5 5
5.5
6
V DS, DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS, GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.16
0.14
0.12
0.1
0.08
0.06
V GS = 10 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0.16
0.14
0.12
0.1
0.08
0.06
V GS = 15 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0.04
0.02
0.04
0.02
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
I D, DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
2.2
2
I D = 1.5 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.8
1.6
1.4
1.2
1
0.8
100
10
T J = 125 ° C
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS, DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
相关PDF资料
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相关代理商/技术参数
NTF3055-160 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T1 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTF3055-160T3 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTF3055-160T3LF 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTF3055L108 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 3.0 Amps, 60 Volts, Logic Level
NTF3055L108D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T1 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube